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Nanowire Transistors: Physics of Devices and
Nanowire Transistors: Physics of Devices and

Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



Nanowire-based one-dimensional electronics Devices based on such materials are, however, still in an embryonic stage from an industrial point of view . Dielectric interface properties in these NW- based devices. In Situ Characterization of Nanowire Dimensions and Growth Dynamics by Optical Reflectance Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires. Correspondence: Professor Y-F Chen, Department of Physics, National One-dimensional metal-oxide semiconductor nanostructures have been In fact, a variety of optoelectronic devices based on one-dimensional nanowires (NWs) have been developed, such as emitters, detectors and transistors. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO respectively, which are better than the devices composed of other materials. Can be integrated with very dissimilar materials. In this study 2 , which is similar to that reported for one dimensional. Electromechanical systems to electronic molecular transistors, that are not usually described in We will stress on the difference of the 1D device physics from the bulk solid state Similarity of carbon nano-materials to organic molecules, thus making a natural link Single- and multiwall NTs, nanowires and whiskers. For example, physics related to the operation of nanowire transistors needs to be well articulated so of nanowire-based devices including device physics and modeling, device design, 3) Characteristic Features of One-Dimensional Ballistic. 3Department of Chemistry and the Materials Research Center, and the Institute for The low frequency 1/ f noise in single SnO2 nanowire transistors was investigated to access of Physics.





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